features trenchfet power mosfet 175 c junction temperature new low thermal resistance package applications automotive such as: ? diesel fuel injection ? high-side switch ? motor drives SUM18N25-165 vishay siliconix new product document number: 72849 s-40467?rev. a, 15-mar-04 www.vishay.com 1 n-channel 250-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 250 0.165 @ v gs = 10 v 18 d g s n-channel mosfet to-263 s d g top view ordering information: SUM18N25-165?e3 (lead free) absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 250 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 18 continuous drain current (t j = 175 c) t c = 125 c i d 10.4 a pulsed drain current i dm 20 a single pulse a valanche current i as 5 single pulse a valanche energy a l = 0.1 mh e as 1.25 mj maximum power dissipation a t c = 25 c p d 150 b w maximum power dissipation a t a = 25 c c p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount (to-263) c r thja 40 c/w junction-to-case (drain) r thjc 1.0 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
SUM18N25-165 vishay siliconix new product www.vishay.com 2 document number: 72849 s-40467?rev. a, 15-mar-04 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 250 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 250 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 250 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 250 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 15 v, v gs = 10 v 20 a v gs = 10 v, i d = 14 a 0.130 0.165 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 14 a, t j = 125 c 0.347 ds(on) v gs = 10 v, i d = 14 a, t j = 175 c 0.462 forward transconductance a g fs v ds = 15 v, i d = 18 a 36 s dynamic b input capacitance c iss 1950 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 160 pf reverse transfer capacitance c rss 70 total gate charge c q g 30 45 gate-source charge c q gs v ds = 125 v, v gs = 10 v, i d = 18 a 10 nc gate-drain charge c q gd ds , gs , d 10 gate resistance r g 1.6 turn-on delay time c t d(on) 15 25 rise time c t r v dd = 125 v, r l = 7.0 130 195 ns turn-off delay time c t d(off) v dd = 125 v , r l = 7 . 0 i d 18 a, v gen = 10 v, r g = 2.5 30 45 ns fall time c t f 100 150 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 18 a pulsed current i sm 20 a forward voltage a v sd i f = 18 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 115 175 ns peak reverse recovery current i rm(rec) i f = 18 a, di/dt = 100 a/ s 10 15 a reverse recovery charge q rr 0.58 1.3 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUM18N25-165 vishay siliconix new product document number: 72849 s-40467?rev. a, 15-mar-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 10 20 30 40 50 60 048121620 0 700 1400 2100 2800 0 40 80 120 160 200 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 0 4 8 12 16 20 048121620 0 4 8 12 16 20 0 8 16 24 32 40 48 56 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 048121620 0 4 8 12 16 20 0123456 ? 55 c t c = 125 c v ds = 125 v i d = 17 a v gs = 10 thru 6 v 4 v v gs = 10 v t c = ? 55 c 25 c 125 c c oss c iss i d ? drain current (a) 5 v 25 c c rss
SUM18N25-165 vishay siliconix new product www.vishay.com 4 document number: 72849 s-40467?rev. a, 15-mar-04 typical characteristics (25 c unless noted) 0.4 0.8 1.2 1.6 2.0 2.4 2.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 18 a t j = 25 c t j = 150 c 0 r ds(on) ? on-resiistance (normalized) drain source breakdown vs. junction t emperature avalanche current vs. time 250 265 280 295 310 325 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) t in (sec) 100 1 0.000001 0.0001 0.01 0.1 0.01 (a) i dav 0.001 i av (a) @ t a = 150 c (v) v (br)dss i d = 10 ma 10 0.1 0.00001 i av (a) @ t a = 25 c
SUM18N25-165 vishay siliconix new product document number: 72849 s-40467?rev. a, 15-mar-04 www.vishay.com 5 thermal ratings 0 4 8 12 16 20 0 25 50 75 100 125 150 175 square wave pulse duration (sec) 0.02 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 10 0.1 0.1 1 10 1000 limited by r ds(on) 1 100 t c = 25 c single pulse normalized thermal transient impedance, junction-to-case 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 normalized effective transient thermal impedance maximum drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 0.2 0.1 duty cycle = 0.5 10 ms 100 ms, dc 1 100 s 10 s 100 1 ms 0.05 single pulse
|
